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                          <header>
                              <identifier>oai:research.chalmers.se:215578</identifier>
                              <datestamp>2018-11-23T10:44:20Z</datestamp>
                              <setSpec>openaire</setSpec>
                          </header>
                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>Hysteresis modeling in graphene field effect transistors</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/215578</dc:identifier>
                                  <dc:date>2015</dc:date>
                                              <dc:creator>Winters, Michael</dc:creator>
                                              <dc:creator>Sveinbjörnsson, Einar</dc:creator>
                                              <dc:creator>Rorsman, Niklas</dc:creator>
                                                  <dc:subject>Other Engineering and Technologies</dc:subject>
                                                  <dc:subject>Nano Technology</dc:subject>
                                          <dc:description>Graphene field effect transistors with an Al2O3 gate dielectric are fabricated on H-intercalated bilayer graphene grown on semi-insulating 4H-SiC by chemical vapour deposition. DC measurements of the gate voltage nu(g) versus the drain current i(d) reveal a severe hysteresis of clockwise orientation. A capacitive model is used to derive the relationship between the applied gate voltage and the Fermi energy. The electron transport equations are then used to calculate the drain current for a given applied gate voltage. The hysteresis in measured data is then modeled via a modified Preisach kernel.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/604391//Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4913209</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Journal of Applied Physics (0021-8979) vol.117(2015)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
                              </oai_dc:dc>
                          </metadata>
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