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                          <header>
                              <identifier>oai:research.chalmers.se:251098</identifier>
                              <datestamp>2018-01-25T17:25:39Z</datestamp>
                              <setSpec>openaire</setSpec>
                          </header>
                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>Electrical gate control of spin current in van der Waals heterostructures at room temperature</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/251098</dc:identifier>
                                  <dc:date>2017</dc:date>
                                              <dc:creator>Dankert, André</dc:creator>
                                              <dc:creator>Dash, Saroj Prasad</dc:creator>
                                                  <dc:subject>Nano Technology</dc:subject>
                                              <dc:subject>Charge</dc:subject>
                                              <dc:subject>Polarization</dc:subject>
                                              <dc:subject>Injection</dc:subject>
                                              <dc:subject>Effect Transistor</dc:subject>
                                              <dc:subject>Field</dc:subject>
                                              <dc:subject>Graphene</dc:subject>
                                              <dc:subject>Hexagonal Boron-Nitride</dc:subject>
                                              <dc:subject>Transport</dc:subject>
                                              <dc:subject>Precession</dc:subject>
                                              <dc:subject>Spintronics</dc:subject>
                                          <dc:description>Two-dimensional (2D) crystals offer a unique platform due to their remarkable and contrasting spintronic properties, such as weak spin-orbit coupling (SOC) in graphene and strong SOC in molybdenum disulfide (MoS2). Here we combine graphene and MoS2 in a van der Waals heterostructure (vdWh) to demonstrate the electric gate control of the spin current and spin lifetime at room temperature. By performing non-local spin valve and Hanle measurements, we unambiguously prove the gate tunability of the spin current and spin lifetime in graphene/MoS2 vdWhs at 300 K. This unprecedented control over the spin parameters by orders of magnitude stems from the gate tuning of the Schottky barrier at the MoS2/graphene interface and MoS2 channel conductivity leading to spin dephasing in high-SOC material. Our findings demonstrate an all-electrical spintronic device at room temperature with the creation, transport and control of the spin in 2D materials heterostructures, which can be key building blocks in future device architectures.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/604391//Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1038/ncomms16093</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Nature Communications (2041-1723) vol.8(2017)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
                              </oai_dc:dc>
                          </metadata>
                      </record>