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                              <identifier>oai:research.chalmers.se:183823</identifier>
                              <datestamp>2018-01-25T20:45:42Z</datestamp>
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                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/183823</dc:identifier>
                                  <dc:date>2013</dc:date>
                                              <dc:creator>Alexander-Webber, J. A.</dc:creator>
                                              <dc:creator>Baker, A. M. R.</dc:creator>
                                              <dc:creator>Janssen, Tjbm</dc:creator>
                                              <dc:creator>Tzalenchuk, A.Y.</dc:creator>
                                              <dc:creator>Lara Avila, Samuel</dc:creator>
                                              <dc:creator>Kubatkin, Sergey</dc:creator>
                                              <dc:creator>Yakimova, R.</dc:creator>
                                              <dc:creator>Piot, B. A.</dc:creator>
                                              <dc:creator>Maude, D. K.</dc:creator>
                                              <dc:creator>Nicholas, R. J.</dc:creator>
                                                  <dc:subject>Physical Sciences</dc:subject>
                                          <dc:description>We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I-c) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (rho(xx) = 0) shows a [1 - (T/T-c)(2)] dependence and persists up to T-c &gt; 45 K at 29 T. With magnetic field Ic was found to increase alpha B-3/2 and T-c alpha B-2. As the Fermi energy approaches the Dirac point, the nu = 2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/257829//New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevLett.111.096601</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Physical Review Letters (0031-9007) vol.111(2013)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
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                          </metadata>
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