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                          <header>
                              <identifier>oai:research.chalmers.se:128173</identifier>
                              <datestamp>2018-05-29T11:05:34Z</datestamp>
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                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>Charge transfer between epitaxial graphene and silicon carbide</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/128173</dc:identifier>
                                  <dc:date>2010</dc:date>
                                              <dc:creator>Kopylov, S.</dc:creator>
                                              <dc:creator>Tzalenchuk, A.Y.</dc:creator>
                                              <dc:creator>Kubatkin, Sergey</dc:creator>
                                              <dc:creator>Fal'ko, V. I.</dc:creator>
                                                  <dc:subject>Physical Sciences</dc:subject>
                                              <dc:subject>electron density</dc:subject>
                                              <dc:subject>charge exchange</dc:subject>
                                              <dc:subject>silicon compounds</dc:subject>
                                              <dc:subject>transistors</dc:subject>
                                              <dc:subject>semiconductor epitaxial layers</dc:subject>
                                              <dc:subject>graphene</dc:subject>
                                              <dc:subject>bilayer graphene</dc:subject>
                                              <dc:subject>semiconductor doping</dc:subject>
                                              <dc:subject>work function</dc:subject>
                                              <dc:subject>monolayers</dc:subject>
                                              <dc:subject>epitaxial growth</dc:subject>
                                          <dc:description>We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/257829//New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3487782</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Applied Physics Letters (0003-6951) vol.97(2010)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
                              </oai_dc:dc>
                          </metadata>
                      </record>