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                          <header>
                              <identifier>oai:research.chalmers.se:214535</identifier>
                              <datestamp>2018-05-22T10:57:42Z</datestamp>
                              <setSpec>openaire</setSpec>
                          </header>
                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>High mobility epitaxial graphene devices via aqueous-ozone processing</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/214535</dc:identifier>
                                  <dc:date>2015</dc:date>
                                              <dc:creator>Yager, Thomas</dc:creator>
                                              <dc:creator>Webb, M. J.</dc:creator>
                                              <dc:creator>Grennberg, H.</dc:creator>
                                              <dc:creator>Yakimova, R.</dc:creator>
                                              <dc:creator>Lara Avila, Samuel</dc:creator>
                                              <dc:creator>Kubatkin, Sergey</dc:creator>
                                                  <dc:subject>Other Engineering and Technologies</dc:subject>
                                          <dc:description>We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/604391//Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1063/1.4907947</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Applied Physics Letters (0003-6951) vol.106(2015)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
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