body: <record xmlns="http://www.openarchives.org/OAI/2.0/">
                          <header>
                              <identifier>oai:research.chalmers.se:131089</identifier>
                              <datestamp>2018-09-03T14:14:31Z</datestamp>
                              <setSpec>openaire</setSpec>
                          </header>
                          <metadata>
                              <oai_dc:dc xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
                                  <dc:title>Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors</dc:title>
                                  <dc:identifier>https://research.chalmers.se/en/publication/131089</dc:identifier>
                                  <dc:date>2010</dc:date>
                                              <dc:creator>Vasallo, Beatriz G.</dc:creator>
                                              <dc:creator>Rodilla, H.</dc:creator>
                                              <dc:creator>Gonzalez, T.</dc:creator>
                                              <dc:creator>Moschetti, Giuseppe</dc:creator>
                                              <dc:creator>Grahn, Jan</dc:creator>
                                              <dc:creator>Mateos, J.</dc:creator>
                                                  <dc:subject>Physical Sciences</dc:subject>
                                              <dc:subject>hemts</dc:subject>
                                              <dc:subject>performance</dc:subject>
                                              <dc:subject>semiconductors</dc:subject>
                                              <dc:subject>transport</dc:subject>
                                              <dc:subject>impact ionization</dc:subject>
                                              <dc:subject>inas</dc:subject>
                                              <dc:subject>simulation</dc:subject>
                                              <dc:subject>noise</dc:subject>
                                              <dc:subject>holes</dc:subject>
                                          <dc:description>A semiclassical two-dimensional ensemble Monte Carlo simulator is used to perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors (HEMTs). Kink effect, this is, an anomalous increase in the drain current I-D when increasing the drain-to-source voltage V-DS, leads to a reduction in the gain and a rise in the level of noise, thus limiting the utility of these devices for microwave applications. Due to the small band gap of InAs, InAs/AlSb HEMTs are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. The results indicate that, when V-DS is high enough for the onset of impact ionization, holes thus generated tend to pile up in the buffer (at the gate-drain side) due to the valence-band energy barrier between the buffer and the channel. Due to this accumulation of positive charge the channel is further opened and I-D increases, leading to the kink effect in the I-V characteristics and eventually to the device electrical breakdown. The understanding of this phenomenon provides useful information for the development of kink-effect-free InAs/AlSb HEMTs.</dc:description>
                                                                  <dc:relation>info:eu-repo/grantAgreement/EC/FP7/243845//Semiconductor Nanodevices for Room temperature THz Emission and Detection (ROOTHz)/</dc:relation>
                                                  <dc:relation>info:eu-repo/semantics/altIdentifier/doi/10.1063/1.3503430</dc:relation>
                                          <dc:type>info:eu-repo/semantics/article</dc:type>
                                          <dc:source>Journal of Applied Physics (0021-8979) vol.108(2010)</dc:source>
                                                      <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:language>eng</dc:language>
                                  <dc:audience>Researchers</dc:audience>
                                  <dc:format>application/pdf</dc:format>
                              </oai_dc:dc>
                          </metadata>
                      </record>